Readout Circuit for CQD Sensor 640×512 Array IR640

Features of Readout Circuit for CQD Sensor 640×512 Array IR640

  • Suitable for P-on-N type devices

  • Support the imaging of InGaAs, CQDs, OPD, perovskite devices



Specifications of Readout Circuit for CQD Sensor 640×512 Array IR640

Parameters

IR640

Pixel Array

640×512

Pixel Size

15μm

DC Voltage

1.8V(Ana&Dig),3.3V(IO)

Power Consumption

70mW(Typical)

Integration Time

50 μs~15 ms adjustable with 10μs

Readout Noise

450e-

Full Well Capacity

460Ke-

Frame Rate

Up to 80 fps

Main Clock

Up to 8 MHz

Interface

4 differential analog interfaces

Output Voltage

0.9±0.5V

Pixel Electrode

13×13μm Au




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