Area sensor and linear sensor made of InGaAs (Indium Gallium Arsenide) show excellent photoelectric conversion efficiency and high sensitivity, and the device response band extends from 0.9-1.7nm to 0.4-1.7nm.
- SWIR InGaAs Detector GH-SW640Pro
- SWIR InGaAs Detector GH-SW320
- SWIR InGaAs Detector GH-SW1280
- SWIR InGaAs Linear Detector 1024×1/12.5μm GH-SWLA-1024
- SWIR InGaAs Linear Detector 512×1/2 GH-SWLA-512